Infineon F3L100R07W2E3B11BOMA1 IGBT Module, 117 A 650 V Module, Panel
- RS-stocknr.:
- 273-7363
- Fabrikantnummer:
- F3L100R07W2E3B11BOMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 54,97
(excl. BTW)
€ 66,51
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 54,97 |
| 5 - 9 | € 53,87 |
| 10 - 99 | € 49,97 |
| 100 - 249 | € 45,79 |
| 250 + | € 42,28 |
*prijsindicatie
- RS-stocknr.:
- 273-7363
- Fabrikantnummer:
- F3L100R07W2E3B11BOMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 117A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 300W | |
| Package Type | Module | |
| Mount Type | Panel | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | UL (E83335) | |
| Height | 16.4mm | |
| Length | 62.8mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 117A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 300W | ||
Package Type Module | ||
Mount Type Panel | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals UL (E83335) | ||
Height 16.4mm | ||
Length 62.8mm | ||
Automotive Standard No | ||
The Infineon IGBT module has 650 V VCES, 100 A continuous DC collector current 3 level phase leg phase leg IGBT module with TRENCHSTOP IGBT3, Emitter Controlled 3 diode, NTC and Press FIT Contact Technology. This IGBT module increased blocking voltage capability to 650V and available with Al2O3 substrate with low thermal resistance.
Low VCEsat
Compact design
Rugged mounting
Low inductive design
Low Switching Losses
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