Infineon DF200R07W2H3B77BPSA1 IGBT Module, 40 A, 70 A 650 V
- RS-stocknr.:
- 248-1195
- Fabrikantnummer:
- DF200R07W2H3B77BPSA1
- Fabrikant:
- Infineon
Subtotaal (1 tray van 15 eenheden)*
€ 615,225
(excl. BTW)
€ 744,42
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 16 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 15 + | € 41,015 | € 615,23 |
*prijsindicatie
- RS-stocknr.:
- 248-1195
- Fabrikantnummer:
- DF200R07W2H3B77BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 40 A, 70 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 4 | |
| Maximum Power Dissipation | 20 mW | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 40 A, 70 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 4 | ||
Maximum Power Dissipation 20 mW | ||
The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp. This device has Booster configuration and uses IGBT HighSpeed 3 technology.
Best cost-performance ratio with reduced system costs
High degree of freedom in design
Highest efficiency and power density
High degree of freedom in design
Highest efficiency and power density
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