Infineon F3L150R07W2H3B11BPSA1 IGBT Module, 85 A 650 V
- RS-stocknr.:
- 248-1202
- Fabrikantnummer:
- F3L150R07W2H3B11BPSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 70,54
(excl. BTW)
€ 85,35
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 11 stuk(s) vanaf 22 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 70,54 |
*prijsindicatie
- RS-stocknr.:
- 248-1202
- Fabrikantnummer:
- F3L150R07W2H3B11BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 85 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 20 mW | |
| Number of Transistors | 4 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 85 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 20 mW | ||
Number of Transistors 4 | ||
The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp. This device uses IGBT HighSpeed 3 technology.
Best cost-performance ratio with reduced system costs
High degree of freedom in design
Highest efficiency and power density
High degree of freedom in design
Highest efficiency and power density
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