Infineon IKP10N60TXKSA1 IGBT Transistor Module, 24 A 600 V PG-TO-220-3
- RS-stocknr.:
- 259-1528
- Fabrikantnummer:
- IKP10N60TXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 53,40
(excl. BTW)
€ 64,60
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 11 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,068 | € 53,40 |
| 100 - 200 | € 0,865 | € 43,25 |
| 250 - 450 | € 0,812 | € 40,60 |
| 500 - 950 | € 0,763 | € 38,15 |
| 1000 + | € 0,744 | € 37,20 |
*prijsindicatie
- RS-stocknr.:
- 259-1528
- Fabrikantnummer:
- IKP10N60TXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 24 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 110 W | |
| Number of Transistors | 3 | |
| Package Type | PG-TO-220-3 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 24 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 110 W | ||
Number of Transistors 3 | ||
Package Type PG-TO-220-3 | ||
The Infineon trenchstop low loss duo pack and it is field stop technology with soft, fast recovery anti-parallel emitter controlled HE diode. It is Hard-switching 600 V, 10 A trenchstop IGBT3 co-packed with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and field stop concept.
Highest efficiency and low conduction and switching losses
Comprehensive portfolio in 600 V and 1200 V for flexibility of design
High device reliability
Low EMI emissions
Comprehensive portfolio in 600 V and 1200 V for flexibility of design
High device reliability
Low EMI emissions
Gerelateerde Links
- Infineon IKP10N60TXKSA1 IGBT Transistor Module, 24 A 600 V PG-TO-220-3
- Infineon IGP50N60TXKSA1 IGBT Transistor Module, 90 A 600 V PG-TO220-3
- Infineon IMBG120R350M1HXTMA1 IGBT Transistor Module PG-TO263-7
- Infineon IKW50N65H5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IKP15N65H5XKSA1 IGBT Transistor Module, 30 A 650 V PG-TO220-3
- Infineon IGW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IKW40N65RH5XKSA1 Single IGBT Transistor Module, 40 A 650 V PG-TO247-3
