Infineon IGP10N60TXKSA1 IGBT, 24 A 600 V, 3-Pin TO-220, Through Hole
- RS-stocknr.:
- 258-0985
- Fabrikantnummer:
- IGP10N60TXKSA1
- Fabrikant:
- Infineon
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€ 2,93
(excl. BTW)
€ 3,546
(incl. BTW)
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|---|---|---|
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| 200 + | € 1,07 | € 2,14 |
*prijsindicatie
- RS-stocknr.:
- 258-0985
- Fabrikantnummer:
- IGP10N60TXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 24A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 110W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 29.95mm | |
| Width | 10.36 mm | |
| Height | 4.57mm | |
| Standards/Approvals | JEDEC1 | |
| Series | TRENCHSTOPTM | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 24A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 110W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Length 29.95mm | ||
Width 10.36 mm | ||
Height 4.57mm | ||
Standards/Approvals JEDEC1 | ||
Series TRENCHSTOPTM | ||
Automotive Standard No | ||
The Infineon Hard-switching 600 V, 10 A single TRENCHSTOP IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and field stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
High ruggedness, temperature stable behaviour
Low EMI emissions
Low gate charge
Very tight parameter distribution
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