Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

RS-stocknr.:: 170-2258
Fabrikantnummer:: IKP20N60TXKSA1
Fabrikant:: Infineon

Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

Bulkkorting beschikbaar

Subtotaal (1 tube van 50 eenheden)*

€ 97,95

(excl. BTW)

€ 118,50

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 75,00

Op voorraad

2.450 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,959	€ 97,95
100 - 200	€ 1,764	€ 88,20
250 +	€ 1,666	€ 83,30

*prijsindicatie

RS-stocknr.:: 170-2258
Fabrikantnummer:: IKP20N60TXKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Maximum Continuous Collector Current	41 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	1
	Maximum Power Dissipation	166 W
	Package Type	TO-220
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Transistor Configuration	Single
	Dimensions	10.36 x 4.57 x 15.95mm
	Energy Rating	0.77mJ
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-40 °C

	Alles selecteren
	Merk Infineon
	Maximum Continuous Collector Current 41 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 1
	Maximum Power Dissipation 166 W
	Package Type TO-220
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Transistor Configuration Single
	Dimensions 10.36 x 4.57 x 15.95mm
	Energy Rating 0.77mJ
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -40 °C

Infineon IGBT

The Infineon IGBT is a 3-pin N-channel TO-220 through-hole mount transistor. It has a current rating of 41A and a voltage rating of 600V 3rd generation reverse conducting IGBT optimized for lower switching and conduction losses. Its soft switching behaviour allows for better performance and EMI behaviour. With the help of this transistor excellent performance can be achieved at lower costs.

Features and Benefits

• Cost efficient
• High efficiency
• Low EMI emissions
• Low switching losses
• Lowest V ce (sat) drop for lower conduction losses
• Maximum power dissipation is 166W
• Operating temperature ranges between -40°C and 175°C
• Reduced power dissipation
• Surge current capability
• Very soft, fast recovery anti-parallel emitter controlled diode

Applications

• Home appliances
• Induction cooking stoves
• Industrial drives
• Microwave ovens
• Rice cookers
• UPS
• Welding

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007