STMicroelectronics STGH30H65DFB-2AG Single IGBT, 60 A 650 V H2PAK-2
- RS-stocknr.:
- 248-4893
- Fabrikantnummer:
- STGH30H65DFB-2AG
- Fabrikant:
- STMicroelectronics
Subtotaal (1 rol van 1000 eenheden)*
€ 2.019,00
(excl. BTW)
€ 2.443,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 21 december 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 2,019 | € 2.019,00 |
*prijsindicatie
- RS-stocknr.:
- 248-4893
- Fabrikantnummer:
- STGH30H65DFB-2AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 260 W | |
| Configuration | Single | |
| Package Type | H2PAK-2 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 260 W | ||
Configuration Single | ||
Package Type H2PAK-2 | ||
The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCEsat temperature coefficient and very tight parameter distribution result in safer paralleling operation.
AEC-Q101 qualified
High speed switching series
Safer paralleling
Tight parameter distribution
Low thermal resistance
Soft and very fast recovery antiparallel diode
High speed switching series
Safer paralleling
Tight parameter distribution
Low thermal resistance
Soft and very fast recovery antiparallel diode
Gerelateerde Links
- STMicroelectronics STGH30H65DFB-2AG Single IGBT, 60 A 650 V H2PAK-2
- STMicroelectronics GH50H65DRB2-7AG IGBT, 108 A 650 V, 7-Pin H2PAK-7, Surface Mount
- STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 1.5 A, 1200 V Enhancement, 3-Pin H2PAK-2 STH2N120K5-2AG
- STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 21 A, 1200 V Enhancement, 3-Pin H2PAK-2 STH13N120K5-2AG
- STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7 SCT027H65G3AG
- STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247
- STMicroelectronics STGWA50M65DF2AG Single IGBT, 119 A 650 V, 3-Pin TO-247, Through Hole