STMicroelectronics Schottky Diode, Single, 30 A, 2-Pin 650 V H2PAK STPSC30G065G2Y
- RS-stocknr.:
- 800-470
- Fabrikantnummer:
- STPSC30G065G2Y
- Fabrikant:
- STMicroelectronics
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€ 3,76
(excl. BTW)
€ 4,55
(incl. BTW)
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- Plus verzending 300 stuk(s) vanaf 01 juni 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 3,76 |
*prijsindicatie
- RS-stocknr.:
- 800-470
- Fabrikantnummer:
- STPSC30G065G2Y
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Forward Current If | 30A | |
| Product Type | Schottky Diode | |
| Diode Configuration | Single | |
| Sub Type | Silicon Carbide (SiC) Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | H2PAK | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.3V | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Maximum Operating Temperature | 175°C | |
| Diameter | 3.85mm | |
| Standards/Approvals | ECOPACK2 | |
| Width | 4.7mm | |
| Series | STPSC30G065G2Y | |
| Height | 15.8mm | |
| Length | 10.4mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Forward Current If 30A | ||
Product Type Schottky Diode | ||
Diode Configuration Single | ||
Sub Type Silicon Carbide (SiC) Schottky Diode | ||
Mount Type Through Hole | ||
Package Type H2PAK | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 200A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.3V | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 650V | ||
Maximum Operating Temperature 175°C | ||
Diameter 3.85mm | ||
Standards/Approvals ECOPACK2 | ||
Width 4.7mm | ||
Series STPSC30G065G2Y | ||
Height 15.8mm | ||
Length 10.4mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating.
AEC-Q101 qualified and PPAP capable
No reverse recovery charge in application current range
Switching behaviour independent of temperature
High forward surge capability
Operating Tj from -55 °C to +175 °C
ECOPACK2 compliant component