onsemi NXH40B120MNQ0SNG IGBT Module Q0PACK - Case 180AJ (Pb-Free and Halide-Free Solder Pins)
- RS-stocknr.:
- 245-6981
- Fabrikantnummer:
- NXH40B120MNQ0SNG
- Fabrikant:
- onsemi
Subtotaal (1 tray van 24 eenheden)*
€ 1.964,352
(excl. BTW)
€ 2.376,864
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 25 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 24 + | € 81,848 | € 1.964,35 |
*prijsindicatie
- RS-stocknr.:
- 245-6981
- Fabrikantnummer:
- NXH40B120MNQ0SNG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation | 118 W | |
| Package Type | Q0PACK - Case 180AJ (Pb-Free and Halide-Free Solder Pins) | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Number of Transistors 2 | ||
Maximum Power Dissipation 118 W | ||
Package Type Q0PACK - Case 180AJ (Pb-Free and Halide-Free Solder Pins) | ||
Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Nickel Plated DBC
The ON Semiconductor 3 Channel Boost Q1 Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
1200 V 40 m SiC MOSFETs
Low Reverse Recovery and Fast Switching SiC Diodes
1200 V Bypass and Anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
This Device is Pb Free, Halogen Free/BFR Free and is RoHS Compliant
Low Reverse Recovery and Fast Switching SiC Diodes
1200 V Bypass and Anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
This Device is Pb Free, Halogen Free/BFR Free and is RoHS Compliant
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