onsemi NXH80B120MNQ0SNG IGBT Module Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)
- RS-stocknr.:
- 245-6990
- Fabrikantnummer:
- NXH80B120MNQ0SNG
- Fabrikant:
- onsemi
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 245-6990
- Fabrikantnummer:
- NXH80B120MNQ0SNG
- Fabrikant:
- onsemi
Specificaties
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Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Power Dissipation | 69 W | |
| Number of Transistors | 2 | |
| Package Type | Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins) | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Power Dissipation 69 W | ||
Number of Transistors 2 | ||
Package Type Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins) | ||
Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Nickel-plated DBC
The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
1200 V 80 m SiC MOSFETs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
These devices are Pb free, Halogen Free/BFR Free and are RoHS compliant
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
These devices are Pb free, Halogen Free/BFR Free and are RoHS compliant
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