onsemi NXH450B100H4Q2F2PG IGBT Module, 101 A 1000 V Q2BOOST - Case 180BG (Pb-Free and Halide-Free Press Fit Pins)
- RS-stocknr.:
- 245-6986
- Fabrikantnummer:
- NXH450B100H4Q2F2PG
- Fabrikant:
- onsemi
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 245-6986
- Fabrikantnummer:
- NXH450B100H4Q2F2PG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Continuous Collector Current | 101 A | |
| Maximum Collector Emitter Voltage | 1000 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation | 79 W | |
| Package Type | Q2BOOST - Case 180BG (Pb-Free and Halide-Free Press Fit Pins) | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Continuous Collector Current 101 A | ||
Maximum Collector Emitter Voltage 1000 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation 79 W | ||
Package Type Q2BOOST - Case 180BG (Pb-Free and Halide-Free Press Fit Pins) | ||
The ON Semiconductor Q2BOOST Module is a Si or SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor.
Silicon or SiC Hybrid technology maximizes power density
Low switching loss reduces system power dissipation
Low inductive layout
Press fit and solder pin options
This Device is Pb free, Halogen Free and is RoHS Compliant
Low switching loss reduces system power dissipation
Low inductive layout
Press fit and solder pin options
This Device is Pb free, Halogen Free and is RoHS Compliant
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