onsemi NXH100B120H3Q0PG IGBT Module, 61 A 1200 V Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins
- RS-stocknr.:
- 245-6962
- Fabrikantnummer:
- NXH100B120H3Q0PG
- Fabrikant:
- onsemi
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RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 245-6962
- Fabrikantnummer:
- NXH100B120H3Q0PG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Continuous Collector Current | 61 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 186 W | |
| Number of Transistors | 2 | |
| Package Type | Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Continuous Collector Current 61 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 186 W | ||
Number of Transistors 2 | ||
Package Type Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins | ||
The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
1200 V Ultra Field Stop IGBTs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and Anti parallel Diodes
Low Inductive Layout
Solderable Pins or Press Fit Pins
Thermistor options with Pre applied thermal interface Material and without pre applied TIM
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and Anti parallel Diodes
Low Inductive Layout
Solderable Pins or Press Fit Pins
Thermistor options with Pre applied thermal interface Material and without pre applied TIM
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