STMicroelectronics, Type N-Channel IGBT, 145 A 650 V, 4-Pin TO-247-4, Through Hole
- RS-stocknr.:
- 212-2106
- Fabrikantnummer:
- STGW100H65FB2-4
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 135,12
(excl. BTW)
€ 163,50
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 540 stuk(s) vanaf 24 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 90 | € 4,504 | € 135,12 |
| 120 - 480 | € 4,094 | € 122,82 |
| 510 - 990 | € 3,989 | € 119,67 |
| 1020 + | € 3,889 | € 116,67 |
*prijsindicatie
- RS-stocknr.:
- 212-2106
- Fabrikantnummer:
- STGW100H65FB2-4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 145A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 441W | |
| Package Type | TO-247-4 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | STG | |
| Standards/Approvals | RoHS | |
| Length | 15.9mm | |
| Height | 5.1mm | |
| Width | 21.1 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current Ic 145A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 441W | ||
Package Type TO-247-4 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 4 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Series STG | ||
Standards/Approvals RoHS | ||
Length 15.9mm | ||
Height 5.1mm | ||
Width 21.1 mm | ||
Automotive Standard No | ||
IGBT
The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
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