STMicroelectronics STGWA50HP65FB2 IGBT, 86 A 650 V, 3-Pin TO-247

Bekijk alle IGBTs
Bulkkorting beschikbaar

Subtotaal (1 tube van 30 eenheden)*

€ 52,20

(excl. BTW)

€ 63,30

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 570 stuk(s) vanaf 12 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per tube*
30 - 90€ 1,74€ 52,20
120 - 240€ 1,444€ 43,32
270 - 480€ 1,406€ 42,18
510 - 990€ 1,369€ 41,07
1020 +€ 1,336€ 40,08

*prijsindicatie

RS-stocknr.:
204-3943
Fabrikantnummer:
STGWA50HP65FB2
Fabrikant:
STMicroelectronics
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

STMicroelectronics

Maximum Continuous Collector Current

86 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

272 W

Number of Transistors

1

Package Type

TO-247

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Land van herkomst:
CN
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Maximum junction temperature of 175°C
Co-packaged protection diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive temperature coefficient

Gerelateerde Links