onsemi FGH75T65SHDTL4, Type P-Channel IGBT, 75 A 650 V, 4-Pin TO-247, Through Hole
- RS-stocknr.:
- 181-1889
- Fabrikantnummer:
- FGH75T65SHDTL4
- Fabrikant:
- onsemi
Subtotaal (1 eenheid)*
€ 2,38
(excl. BTW)
€ 2,88
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 80,00
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- Verzending 398 stuk(s) vanaf 30 maart 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 2,38 |
*prijsindicatie
- RS-stocknr.:
- 181-1889
- Fabrikantnummer:
- FGH75T65SHDTL4
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 455W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type P | |
| Pin Count | 4 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | Field Stop 3rd generation | |
| Energy Rating | 160mJ | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 455W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type P | ||
Pin Count 4 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series Field Stop 3rd generation | ||
Energy Rating 160mJ | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
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