onsemi, Type P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole
- RS-stocknr.:
- 178-4259
- Fabrikantnummer:
- FGH60T65SQD-F155
- Fabrikant:
- onsemi
Subtotaal (1 tube van 30 eenheden)*
€ 100,86
(excl. BTW)
€ 122,04
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 390 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 + | € 3,362 | € 100,86 |
*prijsindicatie
- RS-stocknr.:
- 178-4259
- Fabrikantnummer:
- FGH60T65SQD-F155
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 60A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 333W | |
| Package Type | TO-247 G03 | |
| Mount Type | Through Hole | |
| Channel Type | Type P | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Series | Field Stop 4th Generation | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Energy Rating | 50mJ | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 60A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 333W | ||
Package Type TO-247 G03 | ||
Mount Type Through Hole | ||
Channel Type Type P | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Series Field Stop 4th Generation | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Energy Rating 50mJ | ||
- Land van herkomst:
- CN
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Applications
Solar Inverter, UPS, Welder, Telecom, ESS, PFC
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