onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole
- RS-stocknr.:
- 178-4594
- Fabrikantnummer:
- FGH40T120SQDNL4
- Fabrikant:
- onsemi
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Alternatief
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L'unité (dans un tube de 30)
4,944 €
(excl. BTW)
5,982 €
(incl. BTW)
- RS-stocknr.:
- 178-4594
- Fabrikantnummer:
- FGH40T120SQDNL4
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Continuous Collector Current | 160 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Maximum Power Dissipation | 454 W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | P | |
| Pin Count | 4 | |
| Transistor Configuration | Single | |
| Dimensions | 15.8 x 5.2 x 22.74mm | |
| Gate Capacitance | 5000pF | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +175 °C | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Continuous Collector Current 160 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Maximum Power Dissipation 454 W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type P | ||
Pin Count 4 | ||
Transistor Configuration Single | ||
Dimensions 15.8 x 5.2 x 22.74mm | ||
Gate Capacitance 5000pF | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
- Land van herkomst:
- CN
ON Semiconductor IGBT
The ON Semiconductor is a P-channel TO−247−4L IGBT through-hole mount transistor. It has a maximum current rating of 160A and a maximum voltage rating of 1200V. This IGBT is a robust and cost-effective device that provides superior performance in demanding switching applications. It offers both low on-state voltage and minimal switching loss. A soft and fast co−packaged free wheeling diode with a low forward voltage is incorporated into this device.
Features and Benefits
• Cost effective
• Extremely efficient trench with field stop technology
• Halide-free device
• High durability
• Operating temperature ranges between -55°C and 175°C
• Optimized for high speed switching
• Pb-free device
• Soft fast reverse recovery diode
• TJmax is 175°C
• Extremely efficient trench with field stop technology
• Halide-free device
• High durability
• Operating temperature ranges between -55°C and 175°C
• Optimized for high speed switching
• Pb-free device
• Soft fast reverse recovery diode
• TJmax is 175°C
Applications
• Solar inverters
• UPS
• Welding
• UPS
• Welding
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• BS EN 61340-5-1:2007
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