Infineon IKQ75N120CT2XKSA1, P-Channel IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

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RS-stocknr.:
162-3324
Fabrikantnummer:
IKQ75N120CT2XKSA1
Fabrikant:
Infineon
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Infineon

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

938 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

3

Switching Speed

20kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 21.1mm

Maximum Operating Temperature

+175 °C

Gate Capacitance

4856pF

Minimum Operating Temperature

-40 °C

Energy Rating

10.8mJ

Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode.

High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
20% lower R th(jh) compared to TO-247 3 pin
Extended collector-emitter pin creepage of 4.25 mm
Extended clip creepage due to fully encapsulated front side of the package
Higher system power density – I c increase keeping the same system thermal performance
Lower thermal resistance R th(jh) and improved by ∼15% heat dissipation capability of TO-247PLUS vs TO-247
Higher reliability, extended lifetime of the device

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