IXYS IXXK100N60C3H1 IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole
- RS-stocknr.:
- 168-4587
- Fabrikantnummer:
- IXXK100N60C3H1
- Fabrikant:
- IXYS
Subtotaal (1 tube van 25 eenheden)*
€ 439,15
(excl. BTW)
€ 531,375
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 50 stuk(s) vanaf 23 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 25 + | € 17,566 | € 439,15 |
*prijsindicatie
- RS-stocknr.:
- 168-4587
- Fabrikantnummer:
- IXXK100N60C3H1
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 695 W | |
| Package Type | TO-264 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 20 → 60kHz | |
| Transistor Configuration | Single | |
| Dimensions | 20.3 x 5.3 x 26.6mm | |
| Energy Rating | 600mJ | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 695 W | ||
Package Type TO-264 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 20 → 60kHz | ||
Transistor Configuration Single | ||
Dimensions 20.3 x 5.3 x 26.6mm | ||
Energy Rating 600mJ | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
- Land van herkomst:
- PH
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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