IXYS IXYH30N170C IGBT, 100 A 1700 V, 3-Pin TO247AD, Through Hole

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Subtotaal (1 tube van 30 eenheden)*

€ 511,92

(excl. BTW)

€ 619,41

(incl. BTW)

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  • Verzending vanaf 20 oktober 2026
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30 +€ 17,064€ 511,92

*prijsindicatie

RS-stocknr.:
146-4252
Fabrikantnummer:
IXYH30N170C
Fabrikant:
IXYS
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IXYS

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1700 V

Maximum Gate Emitter Voltage

±20 V, ±30V

Number of Transistors

1

Maximum Power Dissipation

937 W

Package Type

TO247AD

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.34mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

IXYS XPT (eXtreme-light Punch Through) IGBTs with current ratings ranging from 29A to 178A, are well-suited for high-voltage, high-speed power conversion applications. Designed using the proprietary thin-wafer XPT technology and the state-of-the-art IGBT process, these devices display such qualities as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Also, thanks to the positive temperature coefficient of their on-state voltage, the new high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage device ones.

Thin wafer XPT technology
Low on-state voltages VCE(sat)
Co-packed fast recovery diodes
Positive temperature coefficient of VCE(sat)
High efficiency
Increased reliability of power systems
Applications
Pulser circuits
Laser and X-ray generators
High-voltage power supplies
High-voltage test equipment
Capacitor discharge circuits
AC switches

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