IXYS IXGH32N170, Type N-Channel IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole
- RS-stocknr.:
- 194-899
- Artikelnummer Distrelec:
- 302-53-415
- Fabrikantnummer:
- IXGH32N170
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 20,54
(excl. BTW)
€ 24,85
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 20,54 |
| 5 - 19 | € 17,69 |
| 20 - 49 | € 16,94 |
| 50 - 99 | € 15,37 |
| 100 + | € 14,98 |
*prijsindicatie
- RS-stocknr.:
- 194-899
- Artikelnummer Distrelec:
- 302-53-415
- Fabrikantnummer:
- IXGH32N170
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 1700V | |
| Maximum Power Dissipation Pd | 350W | |
| Package Type | TO-247AD | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 250ns | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Series | High Voltage | |
| Standards/Approvals | UL 94 V-0 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 1700V | ||
Maximum Power Dissipation Pd 350W | ||
Package Type TO-247AD | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 250ns | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 150°C | ||
Series High Voltage | ||
Standards/Approvals UL 94 V-0 | ||
Automotive Standard No | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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