IXYS IXGH6N170 IGBT, 6 A 1700 V, 3-Pin TO-247AD, Through Hole
- RS-stocknr.:
- 194-760
- Fabrikantnummer:
- IXGH6N170
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 12,54
(excl. BTW)
€ 15,17
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 33 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 12,54 |
| 5 - 24 | € 11,30 |
| 25 - 49 | € 10,45 |
| 50 - 99 | € 9,77 |
| 100 + | € 9,09 |
*prijsindicatie
- RS-stocknr.:
- 194-760
- Fabrikantnummer:
- IXGH6N170
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Maximum Continuous Collector Current | 6 A | |
| Maximum Collector Emitter Voltage | 1700 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | TO-247AD | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.26 x 5.3 x 21.46mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Maximum Continuous Collector Current 6 A | ||
Maximum Collector Emitter Voltage 1700 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Package Type TO-247AD | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.26 x 5.3 x 21.46mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Gerelateerde Links
- IXYS IXGH6N170 IGBT, 6 A 1700 V, 3-Pin TO-247AD, Through Hole
- IXYS IXGH16N170 IGBT, 32 A 1700 V, 3-Pin TO-247AD, Through Hole
- IXYS IXGH24N170 IGBT, 50 A 1700 V, 3-Pin TO-247AD, Through Hole
- IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole
- IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole
- IXYS IXYX30N170CV1 IGBT, 100 A 1700 V, 3-Pin PLUS247, Through Hole
- IXYS IXYH30N170C IGBT, 100 A 1700 V, 3-Pin TO247AD, Through Hole
- Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole