onsemi NGTG35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole

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RS-stocknr.:
145-3244
Fabrikantnummer:
NGTG35N65FL2WG
Fabrikant:
ON Semiconductor
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ON Semiconductor

Maximum Continuous Collector Current

70 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

300 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.26 x 5.3 x 21.08mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Gate Capacitance

3115pF

Land van herkomst:
CN

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.


IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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