onsemi FGY4L100T120SWD, N-Channel Common Emitter IGBT, 200 A 1.2 kV, 4-Pin TO-247-4L, Through Hole
- RS-stocknr.:
- 277-076
- Fabrikantnummer:
- FGY4L100T120SWD
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 10,82
(excl. BTW)
€ 13,09
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 20 stuk(s) vanaf 12 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 10,82 |
| 10 - 99 | € 9,74 |
| 100 - 499 | € 9,00 |
| 500 - 999 | € 8,34 |
| 1000 + | € 7,48 |
*prijsindicatie
- RS-stocknr.:
- 277-076
- Fabrikantnummer:
- FGY4L100T120SWD
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 200A | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 1.07kW | |
| Number of Transistors | 1 | |
| Package Type | TO-247-4L | |
| Configuration | Common Emitter | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 4 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 5mm | |
| Length | 15.8mm | |
| Height | 22.54mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 200A | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 1.07kW | ||
Number of Transistors 1 | ||
Package Type TO-247-4L | ||
Configuration Common Emitter | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 4 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 5mm | ||
Length 15.8mm | ||
Height 22.54mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The ON Semiconductor IGBT and Gen7 Diode in a TO247 4-lead package offer optimal performance with low switching and conduction losses, enabling high-efficiency operations. These components are designed for use in various applications such as solar inverters, uninterruptible power supplies (UPS), and energy storage systems (ESS), providing reliable and efficient power management in these demanding environments.
High current capability
Smooth and optimized switching
Low switching loss
RoHS compliant
Gerelateerde Links
- onsemi FGY4L140T120SWD, N-Channel Common Emitter IGBT, 140 A 1200 V, 4-Pin TO-247-4L, Through Hole
- onsemi FGY4L160T120SWD, N-Channel Common Emitter IGBT, 160 A 1200 V, 4-Pin TO-247-4L, Through Hole
- onsemi FGY4L75T120SWD, N-Channel Common Emitter IGBT, 75 A 1200 V, 4-Pin TO-247-4L, Through Hole
- Infineon FF450R12KE4EHOSA1 Common Emitter IGBT 1200 V, 7-Pin CTI, Panel
- Infineon FS50R12W1T7B11BOMA1, N-Channel Common Emitter IGBT, 50 A 1200 V Module, Panel
- Infineon TDB6HK124N16RRBPSA1, N-Channel Common Emitter IGBT, 70 A 1200 V, 23-Pin, Panel
- ROHM RGA80TRX2HRC15 IGBT, 105 A 1200 V, 4-Pin TO-247-4L, Through Hole
- ROHM RGA80TRX2EHRC15 IGBT, 105 A 1200 V, 4-Pin TO-247-4L, Through Hole