Infineon FP100R12N2T7BPSA2, Type N-Channel Common Emitter IGBT, 100 A 1200 V, 31-Pin Module, Panel
- RS-stocknr.:
- 273-2919
- Fabrikantnummer:
- FP100R12N2T7BPSA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tray van 15 eenheden)*
€ 1.046,895
(excl. BTW)
€ 1.266,75
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 15 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 15 - 15 | € 69,793 | € 1.046,90 |
| 30 + | € 68,048 | € 1.020,72 |
*prijsindicatie
- RS-stocknr.:
- 273-2919
- Fabrikantnummer:
- FP100R12N2T7BPSA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 100A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 20mW | |
| Package Type | Module | |
| Configuration | Common Emitter | |
| Mount Type | Panel | |
| Channel Type | Type N | |
| Pin Count | 31 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.72V | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.5mm | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Length | 122mm | |
| Width | 62 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 100A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 20mW | ||
Package Type Module | ||
Configuration Common Emitter | ||
Mount Type Panel | ||
Channel Type Type N | ||
Pin Count 31 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.72V | ||
Maximum Operating Temperature 175°C | ||
Height 20.5mm | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Length 122mm | ||
Width 62 mm | ||
Automotive Standard No | ||
The Infineon three phase PIM IGBT module with TRENCHSTOP IGBT7, emitter controlled 7 diode and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings.
High reliability and power density
Copper base plate for optimized heat spread
High power density
Solder contact technology
Gerelateerde Links
- Infineon, Type N-Channel Common Emitter IGBT, 100 A 1200 V, 31-Pin Module, Panel
- Infineon, Type N-Channel Common Emitter IGBT, 75 A 1200 V, 31-Pin EconoPIM2, Panel
- Infineon, Type N-Channel Common Emitter IGBT, 50 A 1200 V Module, Panel
- Infineon FP75R12N2T7BPSA2, Type N-Channel Common Emitter IGBT, 75 A 1200 V, 31-Pin EconoPIM2, Panel
- Infineon FS50R12W1T7B11BOMA1, Type N-Channel Common Emitter IGBT, 50 A 1200 V Module, Panel
- Infineon, Type N-Channel Common Emitter IGBT, 75 A 1200 V, 28-Pin Module, Panel
- Infineon FS50R12KT3BPSA1, Type N-Channel Common Emitter IGBT, 75 A 1200 V, 28-Pin Module, Panel
- Infineon Common Emitter IGBT 1200 V, 7-Pin CTI, Panel
