onsemi FGY4L75T120SWD, Type N-Channel Common Emitter IGBT, 75 A 1200 V, 4-Pin TO-247-4L, Through Hole
- RS-stocknr.:
- 277-080
- Fabrikantnummer:
- FGY4L75T120SWD
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 9,30
(excl. BTW)
€ 11,25
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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- Plus verzending 30 stuk(s) vanaf 10 augustus 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 9,30 |
| 10 - 99 | € 8,38 |
| 100 - 499 | € 7,73 |
| 500 - 999 | € 7,16 |
| 1000 + | € 6,42 |
*prijsindicatie
- RS-stocknr.:
- 277-080
- Fabrikantnummer:
- FGY4L75T120SWD
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 652W | |
| Configuration | Common Emitter | |
| Package Type | TO-247-4L | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 15.8mm | |
| Height | 22.54mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 652W | ||
Configuration Common Emitter | ||
Package Type TO-247-4L | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 4 | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 15.8mm | ||
Height 22.54mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The ON Semiconductor IGBT and Gen7 Diode in a TO247 4-lead package offer optimal performance with low switching and conduction losses, enabling high-efficiency operations. These components are designed for use in various applications such as solar inverters, uninterruptible power supplies (UPS), and energy storage systems (ESS), providing reliable and efficient power management in these demanding environments.
High current capability
Smooth and optimized switching
Low switching loss
RoHS compliant
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