Infineon 2ED2109S06FXUMA1 MOSFET Gate Driver 2, 290 mA 8-Pin 25 V, DSO

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€ 8,69

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€ 10,51

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50 - 90€ 0,826€ 8,26
100 - 240€ 0,791€ 7,91
250 - 490€ 0,755€ 7,55
500 +€ 0,703€ 7,03

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Verpakkingsopties
RS-stocknr.:
226-6023
Fabrikantnummer:
2ED2109S06FXUMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

High Speed Power MOSFET & IGBT Driver

Output Current

290mA

Pin Count

8

Fall Time

80ns

Package Type

DSO

Number of Outputs

2

Driver Type

MOSFET

Rise Time

150ns

Minimum Supply Voltage

20V

Number of Drivers

2

Maximum Supply Voltage

25V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Height

1.72mm

Standards/Approvals

JEDEC47/20/22

Series

2ED2109 (4) S06F (J)

Width

3.9 mm

Length

4.9mm

Mount Type

Surface

Automotive Standard

No

The Infineon 2ED2109S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Floating channel designed for bootstrap operation

Operating voltages (VS node) upto + 650 V

Maximum bootstrap voltage (VB node) of + 675 V

Integrated ultra-fast, low resistance bootstrap diode

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