Infineon 2ED2106S06FXUMA1 MOSFET Gate Driver 2, 290 mA 8-Pin 20 V, DSO

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Subtotal (1 pack of 10 units)*

€ 6,26

(exc. VAT)

€ 7,57

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40€ 0,626€ 6,26
50 - 90€ 0,595€ 5,95
100 - 240€ 0,57€ 5,70
250 - 490€ 0,545€ 5,45
500 +€ 0,508€ 5,08

*price indicative

Packaging Options:
RS Stock No.:
226-6020
Mfr. Part No.:
2ED2106S06FXUMA1
Brand:
Infineon
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Merk

Infineon

Product Type

MOSFET

Output Current

290mA

Pin Count

8

Package Type

DSO

Fall Time

80ns

Driver Type

MOSFET

Number of Outputs

2

Rise Time

100ns

Minimum Supply Voltage

20V

Maximum Supply Voltage

20V

Number of Drivers

2

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Series

2ED2106S06F

Length

4.9mm

Width

3.9 mm

Standards/Approvals

No

Height

1.72mm

Mount Type

Surface

Automotive Standard

No

The Infineon 2ED2106S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Floating channel designed for bootstrap operation

Operating voltages (VS node) upto + 650 V

Maximum bootstrap voltage (VB node) of + 675 V

Integrated ultra-fast, low resistance bootstrap diode

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