Infineon MOSFET Gate Driver 2, 290 mA 8-Pin 25 V, DSO

Bekijk alle Gate Drivers

Subtotaal (1 rol van 2500 eenheden)*

€ 1.397,50

(excl. BTW)

€ 1.690,00

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending vanaf 15 november 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per rol*
2500 +€ 0,559€ 1.397,50

*prijsindicatie

RS-stocknr.:
226-6021
Fabrikantnummer:
2ED2109S06FXUMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

High Speed Power MOSFET & IGBT Driver

Output Current

290mA

Pin Count

8

Fall Time

80ns

Package Type

DSO

Driver Type

MOSFET

Number of Outputs

2

Rise Time

150ns

Minimum Supply Voltage

20V

Number of Drivers

2

Maximum Supply Voltage

25V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Height

1.72mm

Series

2ED2109 (4) S06F (J)

Length

4.9mm

Width

3.9 mm

Standards/Approvals

JEDEC47/20/22

Mount Type

Surface

Automotive Standard

No

The Infineon 2ED2109S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Floating channel designed for bootstrap operation

Operating voltages (VS node) upto + 650 V

Maximum bootstrap voltage (VB node) of + 675 V

Integrated ultra-fast, low resistance bootstrap diode

Gerelateerde Links