Infineon Bipolar Transistor, 20 mA NPN, 20 V, 4-Pin SOT-143
- RS-stocknr.:
- 258-6986
- Fabrikantnummer:
- BFP181E7764HTSA1
- Fabrikant:
- Infineon
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 258-6986
- Fabrikantnummer:
- BFP181E7764HTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 20mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-143 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Transition Frequency ft | 8GHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 175mW | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | RoHS | |
| Height | 1mm | |
| Width | 2.4mm | |
| Series | BFP181 | |
| Length | 2.9mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 20mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-143 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Transition Frequency ft 8GHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 175mW | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals RoHS | ||
Height 1mm | ||
Width 2.4mm | ||
Series BFP181 | ||
Length 2.9mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is for low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications.
Qualification report according to AEC-Q101 available
Pb free RoHS compliant package
Gerelateerde Links
- Infineon BFP181E7764HTSA1 Bipolar Transistor, 20 mA NPN, 20 V, 4-Pin SOT-143
- Infineon Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-143
- Infineon BFP196E6327HTSA1 Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-143
- Infineon Bipolar Transistor, 80 mA NPN, 12 V, 4-Pin SOT-143
- Infineon BFP193E6327HTSA1 Bipolar Transistor, 80 mA NPN, 12 V, 4-Pin SOT-143
- Infineon Bipolar Transistor, 20 mA NPN, 20 V, 3-Pin SOT-23
- Infineon BFR181E6327HTSA1 Bipolar Transistor, 20 mA NPN, 20 V, 3-Pin SOT-23
- Infineon Low Noise Silicon Bipolar RF Transistor, 65 mA, 20 V, 4-Pin SOT-143