Bipolar Transistors

Bipolar Transistors are a solid state, three-pin devices made from three layers of silicon. A bipolar transistor is designed to amplify current, bipolar transistors can also function as a switch. There are two main types of transistor, PNP (positive negative positive) or NPN (negative positive-negative).

How a Bipolar transistor is made

Bipolar transistors are constructed by joining two signal diodes back to back creating two PN junctions connected in series, sharing a common P or N terminal. By nature, silicon does not normally conduct electricity well. However, when silicon is treated with certain chemicals or impurities we can make the material and electrons behave in a different way. This process is called doping. The doping process improves the semiconductors ability to conduct electricity.

How do bipolar transistors work?

Bipolar transistors have two possible functions, switching, and amplification. Due to the devices three layers of doped semiconductor material, supplying the transistor with a signal voltage enables the discrete component to act as an insulator or a conductor. This clever change provides the transistors with two basic functions, switching (digital) electronics or amplification (analog) electronics.

Transistors are available in panel, surface and through-hole mounting options in plastic package or metal can versions. All have three terminals or pins, the Base, the Collector, and the Emitter.

They are also available as;

  • Digital transistors - are made of a semiconductor material, usually silicon, which conducts the current (or electricity) with little resistance. They also tend to have at least three terminals for easy connection to an external circuit.
  • UJT transistors - constructed of a bar of lightly dope N type silicone with a small piece of heavily doped P type material attached to one side. Since the silicon bar is lightly dope it has very high resistance.

Applications of bipolar transistors?

Transistors are one of the most widely used discrete components in electronic designs and circuits. Transistors are used for the amplification of all types of electrical signals in circuits made up of individual components rather than ICs (integrated circuits).


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Omschrijving Prijs Transistor Type Maximum DC Collector Current Maximum Collector Emitter Voltage Package Type Mounting Type Maximum Power Dissipation Transistor Configuration Maximum Collector Base Voltage Maximum Emitter Base Voltage Maximum Operating Frequency Pin Count Number of Elements per Chip Dimensions Minimum Operating Temperature
RS-stocknr. 122-0085
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FabrikantON Semiconductor
3,863 €
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NPN 16 A 140 V TO-204 Through Hole 150 W Single 160 V 7 V - 3 1 8.51 x 39.37 x 26.67mm -
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FabrikantON Semiconductor
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NPN 800 mA 45 V TO-92 Through Hole 625 mW Single - 5 V 100 MHz 3 1 5.33 x 5.2 x 4.19mm -
RS-stocknr. 168-6056
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1,438 €
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NPN 25 A 100 V TO-247 Through Hole 125 W Single 100 V 5 V 3 MHz 3 1 20.15 x 15.75 x 5.15mm -
RS-stocknr. 803-1061
FabrikantnummerBC33725TFR
FabrikantON Semiconductor
0,082 €
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NPN 800 mA 50 V TO-92 Through Hole 625 mW Single 10 V 5 V 50 MHz 3 1 4.58 x 3.86 x 4.58mm -
RS-stocknr. 178-7544
FabrikantnummerBC33725TAR
FabrikantON Semiconductor
0,036 €
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- - - - - - - - - - - - - -
RS-stocknr. 544-9270
Fabrikantnummer2N3773G
FabrikantON Semiconductor
5,58 €
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NPN 16 A 140 V TO-204 Through Hole 150 W Single 160 V 7 V - 3 1 8.51 x 39.37 x 26.67mm -
RS-stocknr. 671-1116
FabrikantnummerBC33725TA
FabrikantON Semiconductor
0,185 €
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NPN 800 mA 45 V TO-92 Through Hole 625 mW Single - 5 V 100 MHz 3 1 5.33 x 5.2 x 4.19mm -
RS-stocknr. 803-1068
FabrikantnummerBC33725TAR
FabrikantON Semiconductor
0,071 €
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NPN 800 mA 50 V TO-92 Through Hole 625 mW Single 10 V 5 V 50 MHz 3 1 4.58 x 3.86 x 4.58mm -
RS-stocknr. 544-9270A
Fabrikantnummer2N3773G
FabrikantON Semiconductor
5,479 €
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NPN 16 A 140 V TO-204 Through Hole 150 W Single 160 V 7 V - 3 1 8.51 x 39.37 x 26.67mm -
RS-stocknr. 166-1312
FabrikantnummerBC857C,215
FabrikantNexperia
0,016 €
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PNP 100 mA 45 V SOT-23 (TO-236AB) Surface Mount 250 mW Single 50 V 5 V 100 MHz 3 1 1 x 3 x 1.4mm -
RS-stocknr. 790-5441
FabrikantnummerNJVMJB44H11T4G
FabrikantON Semiconductor
0,48 €
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NPN 10 A 80 V D2PAK (TO-263) Surface Mount 50 W Single 10 V dc 5 V 20 MHz 3 1 10.29 x 11.05 x 4.83mm -
RS-stocknr. 170-7962
FabrikantnummerBC857C,235
FabrikantNexperia
0,006 €
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PNP 100 mA -45 V SOT-23 Surface Mount 250 mW Single -50 V -5 V - 3 1 3 x 1.4 x 1mm -
RS-stocknr. 169-8605
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FabrikantON Semiconductor
0,046 €
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NPN 800 mA 50 V TO-92 Through Hole 625 mW Single 10 V 5 V 50 MHz 3 1 4.58 x 3.86 x 4.58mm -
RS-stocknr. 162-9597
FabrikantnummerNJVMJB44H11T4G
FabrikantON Semiconductor
0,472 €
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NPN 10 A 80 V D2PAK (TO-263) Surface Mount 50 W Single 10 V dc 5 V 20 MHz 3 1 10.29 x 11.05 x 4.83mm -
RS-stocknr. 251-3564
FabrikantnummerTIP35C
1,70 €
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NPN 25 A 100 V TO-247 Through Hole 125 W Single 100 V 5 V 3 MHz 3 1 20.15 x 15.75 x 5.15mm -
RS-stocknr. 508-236
FabrikantnummerBC857C,215
FabrikantNexperia
0,04 €
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PNP 100 mA 45 V SOT-23 (TO-236AB) Surface Mount 250 mW Single 50 V 5 V 100 MHz 3 1 1 x 3 x 1.4mm -
RS-stocknr. 805-1056
Fabrikantnummer2N3904TFR
FabrikantON Semiconductor
0,05 €
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NPN 200 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V 300 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS-stocknr. 215-6638
FabrikantnummerFZT853TA
FabrikantDiodesZetex
0,80 €
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NPN 6 A 100 V SOT-223 Surface Mount 3 W Single 200 V 6 V 130 MHz 3 + Tab 1 1.65 x 6.55 x 3.55mm -
RS-stocknr. 124-5326
FabrikantnummerMJW18020G
FabrikantON Semiconductor
4,951 €
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NPN 30 A 450 V TO-247 Through Hole 250 W Single 1000 V dc 9 V 1 MHz 3 1 16.26 x 5.3 x 21.08mm -
RS-stocknr. 485-9834
FabrikantnummerTIP47
0,50 €
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NPN 1 A 250 V TO-220 Through Hole 2 W Single 350 V 5 V 10 MHz 3 1 9.15 x 10.4 x 4.6mm -