Vishay Silicon Junction, Single, 200 mA, 2-Pin 50 V SOD-123 1N4150W-E3-08
- RS-stocknr.:
- 814-8696
- Fabrikantnummer:
- 1N4150W-E3-08
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 250 eenheden)*
€ 52,75
(excl. BTW)
€ 63,75
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Laatste voorraad RS
- Laatste 1.000 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 250 - 1000 | € 0,211 | € 52,75 |
| 1250 - 2250 | € 0,144 | € 36,00 |
| 2500 - 6000 | € 0,101 | € 25,25 |
| 6250 - 12250 | € 0,091 | € 22,75 |
| 12500 + | € 0,08 | € 20,00 |
*prijsindicatie
- RS-stocknr.:
- 814-8696
- Fabrikantnummer:
- 1N4150W-E3-08
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Diode Configuration | Single | |
| Product Type | Silicon Junction | |
| Maximum Forward Current If | 200mA | |
| Sub Type | Silicon Junction | |
| Mount Type | Surface | |
| Package Type | SOD-123 | |
| Pin Count | 2 | |
| Peak Reverse Recovery Time trr | 4ns | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 50V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 4A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.25mm | |
| Standards/Approvals | No | |
| Series | 1N4150W | |
| Length | 2.85mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Diode Configuration Single | ||
Product Type Silicon Junction | ||
Maximum Forward Current If 200mA | ||
Sub Type Silicon Junction | ||
Mount Type Surface | ||
Package Type SOD-123 | ||
Pin Count 2 | ||
Peak Reverse Recovery Time trr 4ns | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 50V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 4A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Operating Temperature 150°C | ||
Height 1.25mm | ||
Standards/Approvals No | ||
Series 1N4150W | ||
Length 2.85mm | ||
Automotive Standard AEC-Q101 | ||
- 1N4150W, Small Signal Fast Switching Diode
- ESD Control Selection Guide V1
- Application Note- Design Guidelines for Schottky Rectifiers
- Diodes Group Body Marking
- Application Note- Fundamentals of Rectifiers
- Application Note- High Speed Data Line Protection
- Application Note- Physical Explanation
- Application Note- Power Factor Correction with Ultrafast Diodes
- Application Note- Rectifiers for Power Factor Correction
- Application Note- Superectifier Design Brings New Level of Reliability to Surface Mount Comp
- Application Note- Trim and Form Process Reccomendation
- Land van herkomst:
- CN
Glass Passivated Junction Fast Switching Plastic Rectifier
Features
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Fast switching for high efficiency
• Low leakage current, typical IR less than 0.2 μA
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
Typical Applications
High voltage rectification of G2 grid CRT and TV, snubber
circuit of Camera flash.
Mechanical Data
Case: DO-204AL, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
Diodes and Rectifiers, Vishay Semiconductor
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