Infineon SDRAM 64 MB Surface, 24-Pin 8 bit FBGA-24 Ball
- RS-stocknr.:
- 273-7513
- Fabrikantnummer:
- S27KL0642DPBHI020
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 3,17
(excl. BTW)
€ 3,84
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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- Plus verzending 3 stuk(s) vanaf 22 mei 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 3,17 |
| 10 - 24 | € 2,51 |
| 25 - 49 | € 2,46 |
| 50 - 99 | € 2,39 |
| 100 + | € 2,35 |
*prijsindicatie
- RS-stocknr.:
- 273-7513
- Fabrikantnummer:
- S27KL0642DPBHI020
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Memory Size | 64MB | |
| Product Type | SDRAM | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 200MHz | |
| Number of Bits per Word | 16 | |
| Mount Type | Surface | |
| Package Type | FBGA-24 Ball | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 24 | |
| Maximum Operating Temperature | 105°C | |
| Series | S27K | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 6mm | |
| Automotive Standard | AEC-Q100 Grade 2 & 3 | |
| Supply Current | 360μA | |
| Minimum Supply Voltage | 1.8V | |
| Maximum Supply Voltage | 3.6V | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Memory Size 64MB | ||
Product Type SDRAM | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 200MHz | ||
Number of Bits per Word 16 | ||
Mount Type Surface | ||
Package Type FBGA-24 Ball | ||
Minimum Operating Temperature -40°C | ||
Pin Count 24 | ||
Maximum Operating Temperature 105°C | ||
Series S27K | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 6mm | ||
Automotive Standard AEC-Q100 Grade 2 & 3 | ||
Supply Current 360μA | ||
Minimum Supply Voltage 1.8V | ||
Maximum Supply Voltage 3.6V | ||
The Infineon DRAM is a high speed CMOS, self refresh DRAM, with HYPERBUS interface. The DRAM array uses dynamic cells that require periodic refresh. Refresh control logic within the device manages the refresh operations on the DRAM array when the memory is not being actively read or written by the HYPERBUS interface master. Since the host is not required to manage any refresh operations, the DRAM array appears to the host as though the memory uses static cells that retain data without refresh. Hence, the memory is more accurately described as Pseudo Static RAM.
200 MHz maximum clock rate
Data throughput up to 400 MBps
Bidirectional read write data strobe
Automotive AEC Q100 Grade 2 and 3
Optional DDR centre aligned read strobe
DDR transfers data on both edges of the clock
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