onsemi 1.2 kV 17 A Diode Schottky 2-Pin TO-247 FFSH10120A-F085
- RS-stocknr.:
- 178-4429
- Fabrikantnummer:
- FFSH10120A-F085
- Fabrikant:
- onsemi
Ontvang bulkkorting
Voeg 10 meer toe om € 12,20 te besparen
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 8,80
(excl. BTW)
€ 10,65
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 20 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Bespaar |
|---|---|---|
| 1 - 9 | € 8,80 | - |
| 10 + | € 7,58 | € 12,20 |
*prijsindicatie
- RS-stocknr.:
- 178-4429
- Fabrikantnummer:
- FFSH10120A-F085
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 17A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 400μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 850A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.75V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.82mm | |
| Standards/Approvals | No | |
| Height | 20.82mm | |
| Length | 15.87mm | |
| Diameter | 6.85mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 17A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 400μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 850A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.75V | ||
Maximum Operating Temperature 175°C | ||
Width 4.82mm | ||
Standards/Approvals No | ||
Height 20.82mm | ||
Length 15.87mm | ||
Diameter 6.85mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 1200V, D1, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175 °C
No Reverse Recovery / No Forward Recovery
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
Applications:
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
End Products:
Automotive HEV-EV Onboard Chargers
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