onsemi 650 V 20 A Schottky Diode Schottky 3-Pin TO-247 FFSH2065BDN-F085
- RS-stocknr.:
- 185-9313
- Fabrikantnummer:
- FFSH2065BDN-F085
- Fabrikant:
- onsemi
Subtotaal (1 verpakking van 2 eenheden)*
€ 6,60
(excl. BTW)
€ 7,98
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Laatste voorraad RS
- Laatste 224 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 + | € 3,30 | € 6,60 |
*prijsindicatie
- RS-stocknr.:
- 185-9313
- Fabrikantnummer:
- FFSH2065BDN-F085
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | EliteSiC | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 160μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 42A | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Width | 4.82mm | |
| Height | 20.82mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series EliteSiC | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 160μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 42A | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Width 4.82mm | ||
Height 20.82mm | ||
Automotive Standard AEC-Q101 | ||
Niet conform
- Land van herkomst:
- CN
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 650V, D2, TO-247-3L Auto SiC 650V
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
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