STMicroelectronics 650 V 4 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC4G065D
- RS-stocknr.:
- 719-664
- Fabrikantnummer:
- STPSC4G065D
- Fabrikant:
- STMicroelectronics
Subtotaal (1 eenheid)*
€ 1,02
(excl. BTW)
€ 1,23
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 300 stuk(s) vanaf 01 juni 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 1,02 |
*prijsindicatie
- RS-stocknr.:
- 719-664
- Fabrikantnummer:
- STPSC4G065D
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Schottky Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Series | STPSC | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 385A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 170μA | |
| Maximum Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.6mm | |
| Length | 15.75mm | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Schottky Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Series STPSC | ||
Rectifier Type SiC Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 385A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 170μA | ||
Maximum Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 4.6mm | ||
Length 15.75mm | ||
- Land van herkomst:
- CN
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
None or negligible reverse recovery charge in application current range
Switching behaviour independent of temperature
High forward surge capability
ECOPACK2 compliant component
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