STMicroelectronics 650 V 10 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC10G065DY
- RS-stocknr.:
- 719-660
- Fabrikantnummer:
- STPSC10G065DY
- Fabrikant:
- STMicroelectronics
Subtotaal (1 eenheid)*
€ 2,04
(excl. BTW)
€ 2,47
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 287 stuk(s) vanaf 01 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 2,04 |
*prijsindicatie
- RS-stocknr.:
- 719-660
- Fabrikantnummer:
- STPSC10G065DY
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | STPSC | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 1.3V | |
| Peak Reverse Current Ir | 425μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 650A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.6mm | |
| Length | 15.75mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series STPSC | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Rectifier Type SiC Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 1.3V | ||
Peak Reverse Current Ir 425μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 650A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.6mm | ||
Length 15.75mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature Based on latest technology optimization, this diode has an improved forward surge current capability, making it Ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions.
AEC-Q101 qualified and PPAP capable
None or negligible reverse recovery charge in application current range
Switching behaviour independent of temperature
High forward surge capability
ECOPACK2 compliant component
Gerelateerde Links
- STMicroelectronics 650 V 4 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC4G065D
- STMicroelectronics 650 V 6 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC6G065D
- STMicroelectronics 650 V 10 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC10G065D
- STMicroelectronics 650 V 20 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC20G065DY
- Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220
- Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220 IDH12G65C5XKSA2
- Nexperia 650 V 10 A Diode SiC Schottky 2-Pin TO-220 PSC1065KQ
- STMicroelectronics 650 V 8 A Diode SiC Schottky 2-Pin TO-220AC STPSC8G065D