Infineon RF Amplifier Low Noise 20 dB, 6-Pin 1615 MHz TSLP
- RS-stocknr.:
- 258-0662
- Fabrikantnummer:
- BGA725L6E6327FTSA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 15000 eenheden)*
€ 2.625,00
(excl. BTW)
€ 3.180,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 15000 + | € 0,175 | € 2.625,00 |
*prijsindicatie
- RS-stocknr.:
- 258-0662
- Fabrikantnummer:
- BGA725L6E6327FTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Amplifier | |
| Amplifier Type | Low Noise | |
| Operating Frequency | 1615 MHz | |
| Technology | Silicon Germanium | |
| Gain | 20dB | |
| Package Type | TSLP | |
| Minimum Supply Voltage | 1.5V | |
| Maximum Supply Voltage | 3.6V | |
| Pin Count | 6 | |
| Minimum Operating Temperature | -40°C | |
| Third Order Intercept OIP3 | -5dBm | |
| Noise Figure | 0.65dB | |
| P1dB - Compression Point | 72mW | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | RoHS | |
| Series | BGA | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Amplifier | ||
Amplifier Type Low Noise | ||
Operating Frequency 1615 MHz | ||
Technology Silicon Germanium | ||
Gain 20dB | ||
Package Type TSLP | ||
Minimum Supply Voltage 1.5V | ||
Maximum Supply Voltage 3.6V | ||
Pin Count 6 | ||
Minimum Operating Temperature -40°C | ||
Third Order Intercept OIP3 -5dBm | ||
Noise Figure 0.65dB | ||
P1dB - Compression Point 72mW | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals RoHS | ||
Series BGA | ||
Automotive Standard No | ||
The Infineon silicon germanium low noise amplifier is a front-end low noise amplifier for global navigation satellite systems from 1550 MHz to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides 20.0 dB gain and 0.65 dB noise figure at a current consumption of 3.6 mA in the application configuration described in chapter 3. The silicon germanium low noise amplifier is based upon Infineon technologies B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage.
RF output internally matched to 50 Ω
Only 1 external SMD component necessary
2kV HBM ESD protection
Pb-free (RoHS compliant) package
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