DiodesZetex DMN53D0U Type N-Channel MOSFET, 300 mA, 50 V Enhancement, 3-Pin SOT-23 DMN53D0U-7
- RS-stocknr.:
- 921-1114
- Fabrikantnummer:
- DMN53D0U-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 100 eenheden)*
€ 4,90
(excl. BTW)
€ 5,90
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 100 stuk(s) vanaf 19 januari 2026
- Plus verzending 7.600 stuk(s) vanaf 26 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 100 - 400 | € 0,049 | € 4,90 |
| 500 - 900 | € 0,045 | € 4,50 |
| 1000 - 1900 | € 0,044 | € 4,40 |
| 2000 - 2900 | € 0,043 | € 4,30 |
| 3000 + | € 0,042 | € 4,20 |
*prijsindicatie
- RS-stocknr.:
- 921-1114
- Fabrikantnummer:
- DMN53D0U-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Series | DMN53D0U | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 520mW | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Series DMN53D0U | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 520mW | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 1mm | ||
Width 1.4 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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