Infineon HEXFET Type N-Channel Power MOSFET, 48 A, 60 V Enhancement, 3-Pin TO-220AB
- RS-stocknr.:
- 919-4937
- Fabrikantnummer:
- IRFZ44EPBF
- Fabrikant:
- Infineon
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 919-4937
- Fabrikantnummer:
- IRFZ44EPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.023Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | ANSI Y14.5M, JEDEC TO-220AB | |
| Height | 8.77mm | |
| Width | 4.69 mm | |
| Length | 10.54mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.023Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals ANSI Y14.5M, JEDEC TO-220AB | ||
Height 8.77mm | ||
Width 4.69 mm | ||
Length 10.54mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Infineon HEXFET Series MOSFET, 48A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFZ44EPBF
This MOSFET features an N-channel configuration, making it suitable for industrial and automation applications. It supports high continuous drain current, which is advantageous for power applications. Designed for enhanced efficiency, it is ideal for electric and electronic systems where quick switching and durability are necessary.
Features & Benefits
• Continuous drain current capability up to 48A for effective operation
• Operates at a drain-source voltage of 60V for power management
• Low Rds(on) improves efficiency and reduces power loss
• Packaged in TO-220AB for straightforward installation and heat dissipation
• Fully avalanche rated, ensuring reliability under stress conditions
Applications
• Power supply circuits for increased efficiency
• Motor control in automation tasks
• DC-DC converters for voltage regulation
• High-performance battery management systems
• Electronic switching devices for enhanced control
What is the maximum gate-to-source voltage for safe operation?
The maximum gate-to-source voltage is ±20V, ensuring proper functionality and safety during operation.
How can this component be effectively mounted?
It is designed for through-hole mounting, facilitating a robust attachment to PCB layouts or heatsinks.
What happens if the device exceeds its maximum junction temperature?
Exceeding the maximum junction temperature of 175°C can result in thermal damage; therefore, proper cooling management is essential.
Can this be used in high-speed switching applications?
Yes, it supports fast switching capabilities, making it suitable for applications requiring rapid signal processing.
What is the typical power dissipation capability at room temperature?
At 25°C, it can dissipate up to 110W, allowing it to handle substantial power flow without overheating.