Infineon HEXFET Type P-Channel MOSFET, 40 A, 100 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 919-4915
Fabrikantnummer:: IRF5210PBF
Fabrikant:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 40 A, 100 V Enhancement, 3-Pin TO-220

Bulkkorting beschikbaar

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Subtotaal (1 tube van 50 eenheden)*

€ 76,80

(excl. BTW)

€ 92,95

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending 900 stuk(s) vanaf 12 november 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,536	€ 76,80
100 - 200	€ 1,306	€ 65,30
250 +	€ 1,152	€ 57,60

*prijsindicatie

RS-stocknr.:: 919-4915
Fabrikantnummer:: IRF5210PBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Forward Voltage Vf	-1.6V
	Maximum Power Dissipation Pd	200W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	180nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	8.77mm
	Width	4.69mm
	Length	10.54mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs -20V, +20V
	Forward Voltage Vf -1.6V
	Maximum Power Dissipation Pd 200W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 180nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 8.77mm
	Width 4.69mm
	Length 10.54mm
	Automotive Standard No

Land van herkomst:: CN

Infineon HEXFET Series MOSFET, 40A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF5210PBF

This MOSFET is designed for various electrical and electronic applications. It is optimised for high efficiency, supporting automation and control systems where effective power management is crucial. Its robust specifications enable precise circuit control, ensuring reliability and efficiency in challenging environments.

Features & Benefits

• 40A continuous drain current accommodates high-power applications

• 100V maximum drain-source voltage provides operational versatility

• P-channel design simplifies circuit configuration

• Enhancement mode functionality facilitates efficient power management

• High maximum power dissipation capability enhances thermal performance

Applications

• Power switching in industrial automation

• DC-DC converters for efficient power supply

• Motor control circuits for precision

• Peak power handling scenarios in electronics

What is the maximum operating temperature for this component?

The component can operate at a maximum temperature of +175°C, making it suitable for high-temperature applications.

How does the low on-resistance benefit circuit performance?

The low on-resistance results in reduced power losses, leading to enhanced energy efficiency and improved thermal management.

Is this suitable for applications in automotive systems?

Yes, its robust specifications and thermal characteristics make it suitable for automotive applications where reliability is essential.

What kind of circuit configurations can it be integrated into?

This component integrates seamlessly into various configurations, including single and parallel arrangements, allowing for design flexibility.

How should it be installed to ensure optimal performance?

Ensure proper thermal contact with a heatsink, and adhere to recommended PCB layout guidelines to enhance performance and reliability.