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    N-Channel MOSFET, 30 A, 55 V, 3-Pin TO-220AB Infineon IRLZ34NPBF

    RS-stocknr.:
    919-4898
    Fabrikantnummer:
    IRLZ34NPBF
    Fabrikant:
    Infineon
    Infineon
    Bekijk alle MOSFETs
    50 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)
    500 op voorraad - levertijd is 3 à 5 werkdagen (UK-voorraad)
    Add to Basket
    Aantal stuks

    Toegevoegd

    Prijs Each (In a Tube of 50)

    1,582 €

    (excl. BTW)

    1,914 €

    (incl. BTW)

    Aantal stuksPer stukPer tube*
    50 - 501,582 €79,10 €
    100 - 2001,534 €76,70 €
    250 - 4501,487 €74,35 €
    500 +1,423 €71,15 €
    *prijsindicatie
    RS-stocknr.:
    919-4898
    Fabrikantnummer:
    IRLZ34NPBF
    Fabrikant:
    Infineon
    Land van herkomst:
    CN

    Wetgeving en conformiteit

    Land van herkomst:
    CN

    Productomschrijving

    N-Channel Power MOSFET 55V, Infineon


    Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.



    MOSFET Transistors, Infineon


    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


    Specificaties

    KenmerkWaarde
    Channel TypeN
    Maximum Continuous Drain Current30 A
    Maximum Drain Source Voltage55 V
    Package TypeTO-220AB
    Mounting TypeThrough Hole
    Pin Count3
    Maximum Drain Source Resistance35 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage2V
    Minimum Gate Threshold Voltage1V
    Maximum Power Dissipation68 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-16 V, +16 V
    Typical Gate Charge @ Vgs25 nC @ 5 V
    Maximum Operating Temperature+175 °C
    Number of Elements per Chip1
    Transistor MaterialSi
    Minimum Operating Temperature-55 °C
    Height8.77mm
    SeriesHEXFET
    50 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)
    500 op voorraad - levertijd is 3 à 5 werkdagen (UK-voorraad)
    Add to Basket
    Aantal stuks

    Toegevoegd

    Prijs Each (In a Tube of 50)

    1,582 €

    (excl. BTW)

    1,914 €

    (incl. BTW)

    Aantal stuksPer stukPer tube*
    50 - 501,582 €79,10 €
    100 - 2001,534 €76,70 €
    250 - 4501,487 €74,35 €
    500 +1,423 €71,15 €
    *prijsindicatie