onsemi PowerTrench Type P-Channel MOSFET, 3.5 A, 20 V Enhancement, 8-Pin SOIC FDS9431A

RS-stocknr.:: 917-5507
Fabrikantnummer:: FDS9431A
Fabrikant:: onsemi

onsemi PowerTrench Type P-Channel MOSFET, 3.5 A, 20 V Enhancement, 8-Pin SOIC FDS9431A

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Subtotaal (1 verpakking van 25 eenheden)*

€ 16,875

(excl. BTW)

€ 20,425

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

Plus verzending 2.500 stuk(s) vanaf 31 augustus 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
25 - 75	€ 0,675	€ 16,88
100 - 225	€ 0,582	€ 14,55
250 +	€ 0,504	€ 12,60

*prijsindicatie

RS-stocknr.:: 917-5507
Fabrikantnummer:: FDS9431A
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	3.5A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOIC
	Series	PowerTrench
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	130mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2.5W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	6nC
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	8V
	Maximum Operating Temperature	150°C
	Length	5mm
	Standards/Approvals	No
	Width	4mm
	Height	1.5mm
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 3.5A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOIC
	Series PowerTrench
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 130mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2.5W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 6nC
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 8V
	Maximum Operating Temperature 150°C
	Length 5mm
	Standards/Approvals No
	Width 4mm
	Height 1.5mm
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.