Infineon Single HEXFET 1 N-Channel MOSFET, 162 A, 40 V Enhancement, 3-Pin I2PAK IRF1404LPBF

RS-stocknr.:: 913-3815
Fabrikantnummer:: IRF1404LPBF
Fabrikant:: Infineon

Infineon Single HEXFET 1 N-Channel MOSFET, 162 A, 40 V Enhancement, 3-Pin I2PAK IRF1404LPBF

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RS-stocknr.:: 913-3815
Fabrikantnummer:: IRF1404LPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Transistor Configuration	Single
	Series	HEXFET
	Number of Elements per Chip	1
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current (Id)	162 A
	Maximum Drain Source Voltage (Vds)	40 V
	Channel Mode	Enhancement
	Pin Count	3
	Package Type	I2PAK (TO-262)
	Forward Voltage (Vf)	1.3 V
	Height	9.65 mm
	Length	10.67 mm
	Maximum Drain Source Resistance (Rds)	4 mΩ
	Maximum Gate Source Voltage (Vgs)	20 V, -20 V
	Maximum Operating Temperature	175 °C
	Maximum Power Dissipation (Pd)	3.8 W
	Minimum Operating Temperature	-55 °C
	Mount Type	Through Hole
	Width	4.83 mm

	Alles selecteren
	Merk Infineon
	Transistor Configuration Single
	Series HEXFET
	Number of Elements per Chip 1
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current (Id) 162 A
	Maximum Drain Source Voltage (Vds) 40 V
	Channel Mode Enhancement
	Pin Count 3
	Package Type I2PAK (TO-262)
	Forward Voltage (Vf) 1.3 V
	Height 9.65 mm
	Length 10.67 mm
	Maximum Drain Source Resistance (Rds) 4 mΩ
	Maximum Gate Source Voltage (Vgs) 20 V, -20 V
	Maximum Operating Temperature 175 °C
	Maximum Power Dissipation (Pd) 3.8 W
	Minimum Operating Temperature -55 °C
	Mount Type Through Hole
	Width 4.83 mm

Land van herkomst:: MX

Infineon HEXFET Series MOSFET, 162A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRF1404LPBF

This MOSFET provides an efficient solution in various electronic applications, particularly where high performance is essential. Its Advanced processing techniques make it suitable for automation and electronic control systems, contributing to modern power management devices.

Features & Benefits

• Delivers a continuous drain current of 162A for robust performance

• Withstands a maximum drain-source voltage of 40V for safe operation

• Exhibits low on-resistance (RDS(on)) of 4 mΩ, enhancing energy efficiency

• Utilises enhancement mode technology for improved switching performance

• Supports through-hole mounting, facilitating integration into existing designs

Applications

• Used in high current circuits for power regulation

• Suitable for power supply designs in industrial automation

• Applied in electric motor drives and control systems

• Ideal for DC-DC converters in renewable energy systems

What is the maximum power dissipation capability?

It can handle power dissipation up to 3.8W under specific conditions, ensuring optimal performance without overheating during operation.

Is it compatible with surface mount designs?

While primarily in the I2PAK package for through-hole applications, it can be integrated into other industrial designs requiring robust components.

How should it be mounted for optimal performance?

Follow proper through-hole mounting techniques to ensure secure soldering, preventing thermal and mechanical failures during operation.

What are the implications of exceeding the specified limits?

Exceeding the continuous drain current or voltage limits may cause thermal overload or permanent damage to the device, affecting overall system reliability.

Can this component be reused after installation?

Reinstallation is possible if careful removal techniques are employed, though repeated thermal cycling may impact long-term reliability.