Infineon CoolMOS C3 N-Channel MOSFET, 47 A, 650 V Enhancement, 3-Pin TO-247

RS-stocknr.:: 911-4849
Fabrikantnummer:: SPW47N60C3FKSA1
Fabrikant:: Infineon

Infineon CoolMOS C3 N-Channel MOSFET, 47 A, 650 V Enhancement, 3-Pin TO-247

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Subtotaal (1 tube van 30 eenheden)*

€ 215,64

(excl. BTW)

€ 260,91

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

240 stuk(s) klaar voor verzending vanaf een andere locatie
Plus verzending 240 stuk(s) vanaf 14 januari 2027

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Aantal stuks	Per stuk	Per tube*
30 - 30	€ 7,188	€ 215,64
60 - 60	€ 6,829	€ 204,87
90 +	€ 6,397	€ 191,91

*prijsindicatie

RS-stocknr.:: 911-4849
Fabrikantnummer:: SPW47N60C3FKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	47A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	CoolMOS C3
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	70mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Typical Gate Charge Qg @ Vgs	252nC
	Maximum Power Dissipation Pd	415W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	5.3mm
	Length	15.9mm
	Standards/Approvals	No
	Height	20.95mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 47A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series CoolMOS C3
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 70mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs -20V, +20V
	Typical Gate Charge Qg @ Vgs 252nC
	Maximum Power Dissipation Pd 415W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 5.3mm
	Length 15.9mm
	Standards/Approvals No
	Height 20.95mm
	Automotive Standard No

Land van herkomst:: PH

Infineon CoolMOS™ C3 Series MOSFET, 47A Maximum Continuous Drain Current, 415W Maximum Power Dissipation - SPW47N60C3FKSA1

This high-voltage MOSFET is designed for power electronics applications. With its N-channel configuration, it offers consistent performance in various settings. Capable of handling a continuous drain current of 47A, it serves multiple industrial and automation purposes, ensuring reliability and effectiveness in switching tasks.

Features & Benefits

• High performance with a maximum voltage rating of 650V

• Low maximum drain-source resistance of 70mΩ enhances energy efficiency

• Robust power dissipation capability of 415W supports intensive applications

• Channels configured for enhancement mode allow for improved control

• Designed for through-hole mounting for straightforward integration

Applications

• Suitable for energy conversion in renewable energy

• Employed in motor drive circuits for enhanced efficiency

• Used in power management systems for increased stability

What is the optimal temperature range for operating this device?

The device operates efficiently between -55°C and +150°C, enhancing its reliability across varied environments.

How can it integrate into existing electrical systems?

This MOSFET is designed for through-hole mounting, making it compatible with standard PCB layouts for easy integration.

What are the safety considerations when using this component?

It is crucial to ensure the gate-source voltage remains within -20V to +20V to prevent damage during operation and maintain system stability.

What kind of applications require such high power capabilities?

Applications requiring significant power handling, such as motor controls, renewable energy systems, and industrial automation, benefit from its robust power ratings.