Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-262
- RS-stocknr.:
- 907-5028
- Fabrikantnummer:
- IRF540NLPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 14,21
(excl. BTW)
€ 17,19
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending 490 stuk(s) vanaf 22 mei 2026
- Plus verzending 1.000 stuk(s) vanaf 22 april 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,421 | € 14,21 |
| 100 - 240 | € 1,35 | € 13,50 |
| 250 - 490 | € 1,292 | € 12,92 |
| 500 - 990 | € 1,236 | € 12,36 |
| 1000 + | € 1,151 | € 11,51 |
*prijsindicatie
- RS-stocknr.:
- 907-5028
- Fabrikantnummer:
- IRF540NLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-262 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Maximum Power Dissipation Pd | 130W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.65mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-262 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Maximum Power Dissipation Pd 130W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 9.65mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-262 IRF540NLPBF
- Infineon HEXFET Type N-Channel MOSFET, 195 A, 40 V Enhancement, 3-Pin TO-262
- Infineon HEXFET Type N-Channel MOSFET, 72 A, 200 V Enhancement, 3-Pin TO-262
- Infineon HEXFET Type N-Channel MOSFET, 72 A, 200 V Enhancement, 3-Pin TO-262 IRFSL4127PBF
- Infineon HEXFET Type N-Channel MOSFET, 195 A, 40 V Enhancement, 3-Pin TO-262 IRFSL7437PBF
- Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type N-Channel MOSFET, 49 A, 55 V TO-262
- Infineon HEXFET Type N-Channel MOSFET, 72 A, 200 V TO-262