Infineon OptiMOS Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC011N03LSIATMA1

RS-stocknr.:: 906-4362
Fabrikantnummer:: BSC011N03LSIATMA1
Fabrikant:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC011N03LSIATMA1

Subtotaal (1 verpakking van 10 eenheden)*

€ 9,32

(excl. BTW)

€ 11,28

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

14.110 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
10 +	€ 0,932	€ 9,32

*prijsindicatie

RS-stocknr.:: 906-4362
Fabrikantnummer:: BSC011N03LSIATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TDSON
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.4mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	34nC
	Maximum Power Dissipation Pd	96W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.7V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.1mm
	Length	6.1mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 30V
	Package Type TDSON
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.4mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 34nC
	Maximum Power Dissipation Pd 96W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.7V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.1mm
	Length 6.1mm
	Automotive Standard No

Vrijgesteld

Infineon OptiMOS Series MOSFET, 30V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC011N03LSIATMA1

This MOSFET is a power switching transistor designed for high-current, low-voltage applications in surface-mounted assemblies. It operates across a wide temperature span and is intended for use where efficient conduction and rapid gate control are required. The device is supplied in an eight-pin TDSON package and is intended to be mounted directly onto circuit board surfaces.

Features and Benefits:

• Very low on-resistance 1.4mΩ reduces conduction losses
• High continuous drain current 100A supports heavy loads
• Low forward voltage Vf 0.7V improves efficiency under load
• Moderate gate charge 34nC enables relatively fast switching
• Maximum drain-source voltage 30V allows low-voltage power stages
• Power dissipation 96W sustains elevated thermal stress

Applications

• Suitable for synchronous buck converters in power supplies
• Ideal for motor-drive stages requiring high current
• Used with battery-management circuits in high-discharge systems
• Can be used for DC-DC converters in telecom equipment
• Used for high-current load switching on surface-mount boards

What gate voltage limits should I observe for safe operation?

The gate-to-source rating is limited to 20V maximum, so gate drive should be kept within this range to prevent dielectric or gate-oxide stress.

How does thermal performance relate to ambient extremes?

The device is specified to operate from -55°C up to 150°C junction temperature, permitting use in environments with wide temperature variation provided adequate thermal management is applied.

What mounting and footprint considerations are required?

It is supplied in a TDSON package with eight pins for surface mounting

ensure PCB thermal vias and copper area accommodate the 96W dissipation and high current paths.

How does channel type influence circuit topology choices?

The N-channel enhancement mode requires the gate to be driven positive relative to source for conduction, making it suitable as a low-side switch or in synchronous arrangements.