Toshiba TK N-Channel MOSFET, 11.1 A, 650 V Enhancement, 3-Pin TO-220 TK11A65W,S5X(M
- RS-stocknr.:
- 891-2875
- Fabrikantnummer:
- TK11A65W,S5X(M
- Fabrikant:
- Toshiba
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 7,06
(excl. BTW)
€ 8,55
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 1,412 | € 7,06 |
| 25 - 45 | € 0,912 | € 4,56 |
| 50 - 95 | € 0,888 | € 4,44 |
| 100 - 245 | € 0,868 | € 4,34 |
| 250 + | € 0,846 | € 4,23 |
*prijsindicatie
- RS-stocknr.:
- 891-2875
- Fabrikantnummer:
- TK11A65W,S5X(M
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 11.1A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | TK | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 390mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.7V | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Maximum Power Dissipation Pd | 35W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 15mm | |
| Length | 10mm | |
| Width | 4.5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 11.1A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series TK | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 390mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.7V | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Maximum Power Dissipation Pd 35W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 15mm | ||
Length 10mm | ||
Width 4.5mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
MOSFET Transistors, Toshiba
Gerelateerde Links
- Toshiba DTMOSIV N-Channel MOSFET, 11.1 A, 650 V Enhancement, 3-Pin TO-252 TK11P65W,RQ(S
- Toshiba TK N-Channel MOSFET, 43 A, 60 V Enhancement, 3-Pin TO-220
- Toshiba TK N-Channel MOSFET, 105 A, 60 V Enhancement, 3-Pin TO-220
- Toshiba TK N-Channel MOSFET, 214 A, 80 V Enhancement, 3-Pin TO-220
- Toshiba TK N-Channel MOSFET, 214 A, 80 V Enhancement, 3-Pin TO-220 TK100E08N1
- Toshiba TK N-Channel MOSFET, 207 A, 100 V Enhancement, 3-Pin TO-220 TK100E10N1
- Toshiba TK N-Channel MOSFET, 55 A, 80 V Enhancement, 3-Pin TO-220 TK35E08N1
- Toshiba TK N-Channel MOSFET, 105 A, 60 V Enhancement, 3-Pin TO-220 TK58E06N1