onsemi PowerTrench Type N-Channel MOSFET, 130 A, 80 V Enhancement, 8-Pin WDFN FDMS86350
- RS-stocknr.:
- 864-8483
- Fabrikantnummer:
- FDMS86350
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 8,63
(excl. BTW)
€ 10,442
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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- 2.698 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 4,315 | € 8,63 |
| 10 - 98 | € 3,505 | € 7,01 |
| 100 - 248 | € 2,83 | € 5,66 |
| 250 - 498 | € 2,73 | € 5,46 |
| 500 + | € 2,51 | € 5,02 |
*prijsindicatie
- RS-stocknr.:
- 864-8483
- Fabrikantnummer:
- FDMS86350
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 130A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | WDFN | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 156W | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.1mm | |
| Width | 6.25 mm | |
| Height | 1.05mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 130A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type WDFN | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 156W | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.1mm | ||
Width 6.25 mm | ||
Height 1.05mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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