onsemi Isolated PowerTrench 2 Type N, Type N-Channel MOSFET, 1.2 A, 20 V Enhancement, 6-Pin SOT-363 FDG1024NZ
- RS-stocknr.:
- 864-8142
- Fabrikantnummer:
- FDG1024NZ
- Fabrikant:
- onsemi
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 864-8142
- Fabrikantnummer:
- FDG1024NZ
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type N | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Series | PowerTrench | |
| Mount Type | Surface, Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 259mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Forward Voltage Vf | 0.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 360mW | |
| Typical Gate Charge Qg @ Vgs | 1.8nC | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.25mm | |
| Length | 2mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N, Type N | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Series PowerTrench | ||
Mount Type Surface, Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 259mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8V | ||
Forward Voltage Vf 0.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 360mW | ||
Typical Gate Charge Qg @ Vgs 1.8nC | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.25mm | ||
Length 2mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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